600v high side driver

V High voltage High Low-side, Gate Driver BSF General Description The BSF is a monolithic high and low side gate drive IC, which can drive high speed power MOSFET and IGBT driver with bootstrap operation. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration. The FAD is a monolithic high- and low-side gate-driver IC, which can drive high speed MOSFETs and IGBTs that operate up to +V. It has a buffered output stage with all NMOS transistors designed for high pulse driving capability and minimum cross-conduction. output drivers feature a high-pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which operates up to V. Package Options 8-Lead SOIC Typical Applications • Motor Control • Air Conditioners • Washing Machines • General Purpose Inverters • Micro/Mini Inverter DrivesAuthor: liiris.

VB High side floating absolute voltage VS High side floating supply offset voltage VB - 25 VB + VHO High side floating output voltage VS - VB + VCC Low side and logic fixed supply voltage 25 VLO Low side output voltage VCC + DT Programmable dead-time pin voltage (IR only) VSS - VCC + VIN Logic. High-Side. Power Management External MOSFET, High Side Bridge Driver. Infineon Technologies. Infineon's MOSFET and insulated gate bipolar transistor (IGBT) gate driver ICs are the simplest, smallest and lowest cost solution to drive MOSFETs or insulated gate bipolar transistors (IGBT) up to V in applications up to 12kW, and can save over 30% in part count in a 50% smaller PCB area compared to a discrete opto-coupler or transformer based solution. V High and Low Side Driver PRODUCT SUMMARY V OFFSET V max. I O +/- (typ.) mA / mA V OUT 10 V - 20 V t on/off (typ.) CC ns / ns GENERAL DESCRIPTION The SLM is a high voltage, high speed power MOSFET and IGBT drivers with independent high- and low-side referenced output channels.

The LT is a quad high-side gate driver allowing the use of low cost N-channel power MOSFETs for high-side switching applications. The integrated power MOSFETs have a low RDS(on) of mΩ and V drain-source breakdown voltage, while the embedded gate drivers high-side can be easily. Floating Channel for Bootstrap Operation to +V with an Absolute Maximum The floating high-side channel can drive an N-channel power MOSFET or IGBT.